Poly Silicon is a core base material located at the front of the PV Value Chain, which leads to solar power generation systems such as ingots, wafers, cells, and modules
Silicon columns are made by rotating high-purity refined silicone solutions into castings.
It can be obtained by using the silicon crystal growth technology such as the Chokralski method (CZ) or the floating zone method (FZ).
Wafer is the basis for raising integrated circuits.
Wafer is a single crystal column made by growing silicon (Si), mostly extracted from sand, sliced into a suitable thickness.
Improve cleaning properties and stand phenomena on wafer surfaces by adding anionic surfactant to improve dispersion.
Polysilicon is the raw material of wafers, which is a main product of semiconductors, and the important basic material which is foremost of the main PV Value Chain of semiconductors for manufacturing wafers, such as the ingot and module for silicon parts.
J materials Co., Ltd. distributes more than 10-Nine level ultrapure products (99.99999999% purity) that are needed in growing the ingot for semiconductor parts, and 11-Nine level (99.999999999% purity) polysilicon that is used in the semiconductor wafer.
We use metal silicon as the main material, which is made by returning SiO2 to carbon compounds, and reacting it with hydrogen and hydrochloric acid.
By using the produced mixed silane, we make the ultrapure TCS through the distillation process.
Also, we make ultrapure poly silicon by making it react in chemical evaporation at high temperatures.
Semiconductor industry (Value Chain)
Property | Specification | |
---|---|---|
Appearance | Qualified materials |
ㆍ Quality indicators of polysilicon blocks or bars consistent with contract terms ㆍ The appearance and surface of the material are small and smooth ㆍ May have cracks less than 3mm deep, but no interlayer |
Coral materials |
ㆍ Blocks or bars of polysilicon, for facades and materials with small appearance, not smooth, or cracks with a surface greater than 3mm ㆍ If the quality of these materials meets the contractual requirements, they are classified as Materials in any proportion |
|
Wastes | ㆍ Silicon particles and materials with graphite less than 3mm | |
Miscellanous items | ㆍ Silicon material is not classified as Qualified Material, Coral Material, Waste |
Item | Donor (ppta) |
Acceptor (ppta) |
Carbon (ppma) |
Total Bulk Metal (ppbw) |
---|---|---|---|---|
XHP | ≤150 | ≤50 | ≤0.080 | ≤1.000 |
XHG | ||||
XHS | ||||
XHN | ≤300 | ≤100 | ≤0.100 | ≤1.000 |
Surfac treatment |
Na | Al | K | Cr | F | Ni | Cu | Zn |
---|---|---|---|---|---|---|---|---|
AE | ≤800 | ≤500 | ≤300 | ≤80 | ≤500 | ≤80 | ≤50 | ≤200 |
CH | ≤1000 | ≤800 | ≤400 | ≤100 | ≤1000 | ≤200 | ≤100 | ≤500 |
Size number |
1# | 2# | 3# | 4# | 5# | ... |
---|---|---|---|---|---|---|
Size/mm | 2-6 | 6-45 | 45-100 | 20-70 | 30-100 |
Product Name | Silicon Crystal Silicon Ingot | Multi-Crystal Silicon “Poly Ingot” |
---|---|---|
Application |
Si Electrode Si Ring Si Parts |
Si Ring Si Parts |
Property | Single Crystal Silicon Ingot | Poly Ingot |
Purity(%) | 99.9999999%(11N) | 99.9999999(9N) |
Diameter | Ø215~Ø600mm | Customer Specification |
Length |
≤ 355mm (≤0.02 ohm.cm) |
G6: 998mm*998*300 Gr: 1170mm*1170*300 |
Direction | <100>,<110>,<111> | Columnar |
Type | P type, Boron Doped | P type, Boron Doped |
Resistance | 0.001~1000 Ω~Cm | 0.001~1000 Ω~Cm |
Oxygen Content(ppma) | ≤ 20 ppma | ≤ 20 ppma |
Carbon Content(ppma) | ≤ 0.3 ppma | ≤ 0.3 ppma |
Diameter | Type/Orientation | Resistivity(Ω·cm) | Slip | Length |
---|---|---|---|---|
200mm~300mm |
p<100>or as customer requried |
<0.02 1-5 60-90 |
free | 150mm~500mm |
200mm~450mm |
p<100>or as customer requried |
<0.02 1-5 60-90 |
free | 150mm~400mm |
Parameter | Method | Standard |
---|---|---|
Resistivity | 4-Point Probe | SEMI |
Impurities | GDMS | IC-Grade |
Oxygen/Carbon | SIMS | Per-Spec |
Semiconductor Integrated Circuit refers to the electronic component that integrates many elements in a chip.
It is made to conduct and save various functions.
In addition, wafer is the foundation for raising the integrated circuits.
The wafer is mostly silicon extracted from sand, that is the original material in which the single crystal pillar that is made by growing the silicon is thinly sliced to a moderate thickness.
Purpose | 12 INCH | |||||
---|---|---|---|---|---|---|
12“ New |
12“ Reclaim |
12“ Reclaim |
12“ New Bare |
12“ New Bare |
12“ New Oxide |
|
Wafer Thickness |
775 +25, -35um | 700~800um | 750~800um | 750~800um | 730~800um | 730~800um |
Oxide Thickness |
1.0um±5% | 1.0um±5% | N/A | N/A | N/A | N/A |
Type | P-type | P-type | P-type | P-type | P-type | P-type |
Notch/Flat | Notch | Notch | Notch | Notch | Notch | Notch |
Purpose | 8 INCH | ||||||||
---|---|---|---|---|---|---|---|---|---|
8“ New Oxide |
8“ Reclaim |
8“ Reclaim |
8“ New Bare |
8“ New Oxide |
8“ Reclaim |
8“ Reclaim |
8“ New Bare |
8“ New Bare |
|
Wafer Thickness |
725±25um | 725±25um | >600 | 725±25um | 725±25um | >700um | >600um | 725±25um | 725±25um |
Oxide Thickness |
1.0um | 1.0um | N/A | N/A | 1.0um | 1.0um | N/A | N/A | N/A |
Type | P-type | P-type | P-type | P-type | P-type | P-type | P-type | P-type | P-type |
Notch/Flat | Notch | Notch | Notch | Notch | Flat | Flat | Flat | Flat | Notch |
Improvement of Cleansing
The colloidal silica maintains stability by resisting between (-)charges on the silica particle surface. M+ in the picture describes the metal-stabilized ion.
The cleaning ability and the stain phenomenon on the wafer surface are improved with improving dispersibility by adding the anionic surfactant.
pH stocking 방지 환경 개선
By adding the type of second amine to enhance the polishing rate and maintain pH, we improved the problems associated with the volatilization of additive (amine type) stinks, and the pH stocking problems in which pH is rapidly reduced.
In the case of other company, the type of first amine may cause environmental (odor) problems because the boiling point is 27 degrees at room temperature and the pH stocking problems may be caused by using Slurry.
Improvement of particle distribution
The dispersion of the silica particle is narrower and spherical compared to other companies.
Improvement of Metal Impurity
The metal impurity in Slurry is lowest.
By adding the chelating agent into the slurry, it controls Cu and Ni ions.
ITEM | Unit | JMS-100BH | J..社 | Remark |
---|---|---|---|---|
Abrasive | Colloidal silica | Colloidal silica | ||
Solid content | % | 12.0±2.0 | 12.0±2.0 | |
SpeᆞGra | - | 1.09 | 1.070 | |
Size | nm | 90-110nm | 80-120nm | Good particle distribution |
Viscosity(at 25℃) | cps | <3 | <3 | |
pH | - | 11.31 | 11.45 | |
pH controller | NH22+ | NH4+ | No smell |
JMS-100BH 90-110nm
J..社 80-120nm